Hiroyuki Sanda is a seasoned NAND and DRAM memory device engineer with 15 years of experience in 3D/2D NAND cell development at Intel Corp. They currently serve as a Principal Device Engineer at Micron Technology, focusing on DRAM device tests and characterization. Previously, Sanda held positions as a Senior and Staff Device Engineer at Intel, where they conducted extensive research and development in NAND technology. Sanda holds a PhD in Electrical Engineering from Stanford University and is pursuing a Bachelor's degree in Electrical Engineering from Kobe University. They are bilingual in English and Japanese.
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San Francisco, United States
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